Power Transistors: Power Mosfets, IGT Transistors, Power Bipolar Transistors, Power Darlingtons

First edition. — New York: General Electric Company, 1985. — 858 p.The circuit diagrams included in this manual are intended merely for illustration of typical semiconductor applications and are not intended as constructional information. Although reasonable care has been taken in their preparation to assure their technical correctness, in the absence of an express written agreement to the contrary, no responsibility is assumed by the General Electric Company for any consequences of their use. The semiconductor products, circuits, and arrangements disclosed herein may be covered by patents of General Electric Company or others. Neither the disclosure of any information herein nor the sale of semiconductor products by General Electric Company conveys any license under patent claims covering combinations of semiconductor products with other products or elements. In the absence of an express written agreement to the contrary, General Electric Company assumes no liability for patent infringement arising out of any use of semiconductor products with other products or elements by any purchaser of semiconductor products, or by others.