Henini M.(ed.) Molecular Beam Epitaxy. From Research to Mass Production

Elsevier Science , 2012. — 744 p. — ISBN 978-0-12-387839-7
First edition
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.
MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.
Molecular beam epitaxy: fundamentals, historical background and future prospects
Molecular beam epitaxy in the ultra-vacuum of space: present and near future
Growth of semiconductor nanowires by molecular beam epitaxy
Droplet epitaxy of nanostructures
Migration-enhanced epitaxy for low-dimensional structures
MBE growth of high-mobility 2DEG
Bismuth-containing III–V semiconductors: Epitaxial growth and physical properties
Molecular beam epitaxy of GaAsBi and related quaternary alloys
MBE of dilute-nitride optoelectronic devices
Effect of antimony coverage on InAs/GaAs (001) heteroepitaxy
Nonpolar cubic III-nitrides: from the basics of growth to device applications
Molecular beam epitaxy of low-bandgap InGaN
Molecular beam epitaxy of IV–VI semiconductors: multilayers, quantum dots and device applications
Epitaxial growth of thin films and quantum structures of II–VI visible-bandgap semiconductors
MBE of transparent semiconducting oxides
Zinc oxide materials and devices grown by MBE
Molecular beam epitaxy of complex oxides
Epitaxial systems combining oxides and semiconductors
Molecular beam epitaxy of III–V ferromagnetic semiconductors
Epitaxial magnetic layers grown by MBE: model systems to study the physics in nanomagnetism and spintronic
Atomic layer-by-layer molecular beam epitaxy of complex oxide films and heterostructures
Molecular beam epitaxy of semi-magnetic quantum dots
Graphene growth by molecular beam epitaxy
Growth and characterisation of fullerene/GaAs interfaces and C60-doped GaAs and AlGaAs layers
Molecular beam epitaxial growth and exotic electronic structure of topological insulators
Thin films of organic molecules: interfaces and epitaxial growth
Molecular beam epitaxy of wide-gap II–VI laser heterostructures
MBE growth of THz quantum cascade lasers
Systems and technology for production-scale molecular beam epitaxy
Mass production of optoelectronic devices
Mass production of sensors grown by MBE