Singh R., Harame D.L., Oprysko M.M. Silicon Germanium: Technology Modeling and Design

IEEE Press / Wiley, 2004. — 364 p. — ISBN: 0-471-44653-X.This book has the distinction of being the first of its kind presenting IBM’s extremely successful endeavor into the silicon germanium (SiGe) market. Over the last 10-20 years, literally hundreds of technical experts have contributed to this effort, and it is with great pride that we are now able to publish the details of IBM’s work in this area for the benefit of our readers.
This book is aimed at radio frequency (RF)/analog and mixed-signal integrated-circuit (IC) designers, computer-aided design (CAD) engineers, semiconductor students, and foundry process engineers worldwide. The goals of this book can be summarized as:
To give the reader a thorough introduction to SiGe bipolar complementary metal-oxide transistors (BiCMOS) as a technology, including the history of its development at IBM;
To provide a detailed insight into the modeling and design automation requirements to enable leading-edge RF/analog and mixed-signal IC products;
To illustrate in-depth applications, implemented using IBM’s advanced SiGe process technologies and design kits.
We have structured this book to cover all key aspects of technology and enablement. We begin with a brief introduction to and historical perspective of IBM’s SiGe technology. Following this, the book is divided into four main chapters:
Chapter 1. Details of the many IBM SiGe technology development programs;
Chapter 2. IBM’s approach to device modeling and characterization, including predictive technology CAD (TCAD) modeling;
Chapter 3. IBM’s design automation and signal integrity knowledge and implementation methodologies, including best-practice implementation of CAD solutions for electrostatic discharge (ESD);
Chapter 4. Design applications in a variety of IBM’s SiGe technologies, including implemented wired, wireless transceiver, power amp, and high-speed memory designs.
In each section, we provide detailed coverage of the key issues together with a full set of measurement and simulation data, as well as references.