Crippa D., Rode D.L., Masi M. (Eds.) Silicon Epitaxy

Academic Press, 2001. — 511 p. — (Series: Semiconductors and Semimetals, Volume 72). — ISBN: 0-12-752181-X.Epitaxy, namely, the growth process of a solid film on a crystalline substrate in which the atoms of the growing film mimic the arrangement of the atoms of the substrate, is one of the most important issues in thin film technology. The importance of epitaxy concerns both fundamental research on thin film growth processes and the application of these procedures to grow high quality crystal layers from different materials for the realization of technically important functions. This concerns also the development of a series of epitaxial growth techniques applied in different branches of solid state electronics, optoelectronics and photonics in manufacturing processes of discrete as well as integrated devices.
This book covers the important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely vapor-phase epitaxy, molecular-beam epitaxy and others.
Readership: Researchers, graduate students, and practitioners working in the semiconductor field both at universities and in industry.CVD Technologies for Silicon: A Quick Survey
Epitaxial Growth Theory: Vapor-Phase Chemistry and Doping
Epitaxial Growth Facilities, Equipment, and Supplies
Epitaxial Growth Techniques
Epitaxial Growth Techniques: Molecular Beam Epitaxy
Epitaxial Growth Modeling
Epitaxial Layer Characterization and Metrology
Epitaxy for Discretes and Power Devices
Epitaxy on Patterned Wafers
Si-Based Alloys: SiGe and SiGe:C
Silicon Epitaxy: New Applications.