Cressler J.D. (Ed.) Measurement and Modeling of Silicon Heterostructure Devices

CRC Press, 2008. — 199 p. — ISBN: 978-1-4200-6692-0.When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of-the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.Overview: Measurement and Modeling
Best-Practice AC Measurement Techniques
Industrial Application of TCAD for SiGe Development
Compact Modeling of SiGe HBTs: HICUM
Compact Modeling of SiGe HBTs: MEXTRAM
CAD Tools and Design Kits
Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs
Transmission Lines on Si
Improved De-Embedding Techniques.