Ielmini D., Waser R. (Eds.) Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications

Wiley, 2016. — 787 p. — ISBN: 978-3-527-33417-9.With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories.
Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text.
An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.Introduction to Nanoionic Elements for Information Technology
ReRAM Cells in the Framework of Two-Terminal Devices
Atomic and Electronic Structure of Oxides
Defect Structure of Metal Oxides
Ion Transport in Metal Oxides
Electrical Transport in Transition Metal Oxides
Quantum Point Contact Conduction
Dielectric Breakdown Processes
Physics and Chemistry of Nanoionic Cells
Electroforming Processes in Metal Oxide Resistive-Switching Cells
Universal Switching Behavior
Quasistatic and PulseMeasuring Techniques
Unipolar Resistive-Switching Mechanisms
Modeling the VCM- and ECM-Type Switching Kinetics
Valence Change Observed by Nanospectroscopy and Spectromicroscopy
Interface-Type Switching
Atomic Switches
Scaling Limits of Nanoionic Devices
Integration Technology and Cell Design
Reliability Aspects
Select Device Concepts for Crossbar Arrays
Bottom-Up Approaches for Resistive Switching Memories
Switch Application in FPGA
ReRAM-Based Neuromorphic Computing