Arora Narain. MOSFET Modeling for VLSI Simulation: Theory and Practice

World Scientific, 2007. — 633 p. — ISBN: 978-981-256-862-5.The author of this book, a well-known specialist of the leading company Cadence Design Systems in the field of computer modeling, presents compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is one of the books that discusses in detail how to measure device model parameters required for circuit simulations.
The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
This book can be used as a technical source in the field of MOSFET modeling for state of the art MOS technology for both practicing device and circuit engineers and engineering students interested in the said area.