Elsevier Science, 2003. — 304 p.
The goal of this book is to introduce the simulation methods necessary to describe the behaviour of semiconductor devices during an electrostatic discharge (ESD). The challenge of this task is the correct description of semiconductor devices under very high current density and high temperature transients. As it stands, the book can be no more than a snapshot and a summary of the research in this field during the past few years. The authors hope that the book will provide the basis for further development of simulation methods at this current frontier of device physics.