Grebennikov A. Radio Frequency and Microwave Power Amplifiers, Volume 1: Principles, Device Modeling and Matching Networks

New York: Institution of Engineering & Technology, 2019. — 582 p.Radio Frequency and Microwave Power Amplifiers are finding an increasingly broad range of applications, particularly in communications and broadcasting, but also in the industrial, medical, automotive, aviation, military, and sensing fields. Each application has its own design specifications, for example, high linearity in modern communication systems or high efficiency in broadcasting, and, depending on process technology, capability to operate efficiently at very high frequencies, such as 77 GHz and higher for automotive radars.
Advances in design methodologies have practical applications in improving gain, power output, bandwidth, power efficiency, linearity, input and output impedance matching, and heat dissipation. This essential reference presented in two volumes aims to provide comprehensive, state-ofthe-art coverage of RF and microwave power amplifier design with in-depth descriptions of current and potential future approaches. Volume 1 covers principles, device modeling and matching networks, while volume 2 focuses specifically on efficiency and linearity enhancement techniques. The volumes will be of particular interest to engineers and researchers engaged in RF and microwave amplifier design, and those who are interested in systems incorporating RF and microwave amplifiers.List of contributors
Power amplifier design principles (Andrei Grebennikov)
Basic classes of operation: A, AB, B, and C
Load line and output impedance
Classes of operation based upon finite number of harmonics
Mixed-mode Class C and nonlinear effect of collector capacitance
Power gain and stability
Impedance matching
Basic principles
Matching with lumped elements
Matching with transmission lines
Push-pull and balanced power amplifiers
Basic push-pull configuration
Baluns
Balanced power amplifiers
Transmission-line transformers and combinersNonlinear active device modeling (Iltcho Angelov and Mattias Thorsell)
Introduction: active devices
Semiconductor devices for PAs
GaAs FET and InP HEMT devices
GaN HEMT devices
CMOS devices
HBT devices
Sources of nonlinearity (Ids, various Gm, Rd, Rtherm, capacitances, breakdown)
Memory effects
Nonlinear characterization
Active load-pull
Fast active load-pull
Nonlinear characterization using active load-pull
Small/Large signal compact models
Small-signal equivalent circuit models
Large-signal compact models
FET ECLSM model
The large-signal model extraction
Extraction of on-resistance (Ron)
Igs parameter extraction and fit
Drain Ids current extraction and fit
Ids parameter extraction model fit low Vds
Self-heating modeling thermal resistance Rtherm fit
Large signal FET equivalent circuit
Capacitances and capacitance models' implementation in simulators
GaN implementation specifics
Implementation of complex Gm shape
Breakdown phenomena
Large-signal model evaluation: power-spectrum measurements and fit
LSVNA measurement and evaluation
Packaging effects
Self-heating modeling implementation GaN
AppendixLoad pull characterization (Christos Tsironis and Tudor Williams)
Definition of load pull
Scalar and vector load pull
Why is load pull needed?
Load pull methods
Reflection on a variable passive load
Injection of coherent (active) signal
The "split signal" method
The "active load" method
"Open loop" active injection
"Hybrid" combination
Impedance tuners
Passive tuners
Electronic (passive) tuners
Wideband tuners
High power tuners
Harmonic load pull
Passive harmonic load pull using di-tri-plexers
Harmonic rejection tuners
Wideband multiharmonic tuners
Low frequency tuners
Special tuners
Fundamental versus harmonic load pull
On wafer integration
Base-band load pull
Advanced considerations on active tuningClosed loop (active load)