Matsuoka T., Kangawa Y. (Eds.) Epitaxial Growth of III-Nitride Compounds: Computational Approach

Ever since the developments of blue light-emitting diodes and laser diodes using epitaxial GaN thin films, III-nitride compounds such as AlN, GaN, and InN have been paid much attention for the use of light emission over a wide range of wavelengths. To improve the device performance of these materials, strict control over the growth conditions and thorough understanding of surface reconstructions and the growth kinetics are essential. In particular, the surface reconstructions and the growth kinetics are crucial for understanding the physics and the chemistry on various technological stages in III-nitride growth.Fundamentals of Computational Approach to Epitaxial Growth of III-Nitride Compounds
Computational Methods
Fundamental Properties of III-Nitride Compounds
Fundamental Properties of III-Nitride Surfaces
Applications of Computational Approach to Epitaxial Growth of III-Nitride Compounds
Thermodynamic Approach to InN Epitaxy
Atomic Arrangement and In Composition in InGaN Quantum Wells
Initial Epitaxial Growth Processes of III-Nitride Compounds
Polarity Inversion and Electron Carrier Generation in III-Nitride Compounds
Defects in Indium-Related Nitride Compounds and Structural Design of AlN/GaN Superlattices
Novel Behaviors Related to III-Nitride Thin Film Growth