Springer, 2017. — 118 p. — (Analog Circuits and Signal Processing). — ISBN: 978-3319656984.
This book provides readers with a single-source guide to fabricate, characterize and model memristor devices for sensing applications. The authors describe a correlated, physics-based model to simulate and predict the behavior of devices fabricated with different oxide materials, active layer thickness, and operating temperature.
They discuss memristors from various perspectives, including working mechanisms, different synthesis methods, characterization procedures, and device employment in radiation sensing and security applications.
Memristor Device OverviewMemristor Device Definition.
Switching Mechanism.
Switching Behavior.
Effect of Electrodes.
Effect of Capping Layer.
Insulating Layer Materials in Memristors.
Prospective Applications.
Synthesis and Characterization of Micro-Thick ТiO2 and НfO2 Memristors.ТiO
2 Micro-Thick Devices.
НfO
2 Micro-Thick Devices.
Synthesis and Characterization of Nano-Thick НfO2 Memristive CrossbarMaterials and Methods.
Memristive Switching Behavior.
Scaling Effects on Electrical Characteristics.
Switching Mechanism.
Synthesis and Characterization of Wire-Based NbO Memristive JunctionsMaterials and Methods.
Results and Discussion.
Memristor Device for Security and Radiation ApplicationsMemristive-Based Radiation Sensing.
Memristor-Based Secure Communication.
Memristor Device ModelingAnionic Memristor Model.
Effect of Oxide Thickness.
Temperature Effect.
Effect of Oxide Material.