New York: Artech House, 2016. — 290 p.
This comprehensive new resource presents a detailed look at the modeling and simulation of microwave semiconductor control devices and circuits. Fundamental PIN, MOSFET, and MESFET nonlinear device modeling are discussed, including the analysis of transient and harmonic behavior. Considering various control circuit topologies, the book analyzes a wide range of models, from simple approximations, to sophisticated analytical approaches. Readers find clear examples that provide guidance in how to use specific modeling techniques for their challenging projects in the field. Numerous illustrations help practitioners better understand important device and circuit behavior, revealing the relationship between key parameters and results. This authoritative volume covers basic and complex mathematical models for the most common semiconductor control elements used in today's microwave and RF circuits and systems.
Nonideal Device Behavior in Control Circuits; Modeling PIN Diodes- Linear Behavior; Modeling PIN Diodes- Non Linear and Time Domain Behavior; Modeling MOSFET Control Devices; Modeling MESFET and HEMT Control Devices; Switch and Switched Circuit Applications; Control and Attenuator Applications.
Historical Perspective and Background.
General Control Circuit Terminology and Operation.
Circuits.
Noise.
Control Elements.
Additional Information.
Nonideal Device Behavior in Control CircuitsControl Device Parasitics.
Modeling Thermal Behavior.
Device Nonlinearity.
Modeling PIN diodes—Linear BehaviorPIN Diode Modeling—Simple.
PIN Diode Equivalent Circuit Models.
Integral-Based PIN Diode Model—Forward Bias.
PIN Diode Impedance as a Function of Frequency.
PIN Diode Reverse Bias Modeling.
Modeling PIN Diodes—Nonlinear and Time Domain BehaviorPIN Diode Forward Bias Distortion.
PIN Diode Reverse Bias Distortion.
Minimum Reverse Bias in High-Power Applications.
Time Domain Models.
Modeling MOSFET Control DevicesReview of CMOS Technology.
Current-Voltage (I-V) Characteristics of the nMOSFET RF Control Device.
Detailed Capacitance Characteristics.
Detailed MOS Control Device Characteristics.
SPICE/BSIM Models: SPICE Levels 1 through 3 and BSIM models.
Modeling MESFET and HEMT Control DevicesReview of Bulk MESFET Technology.
MESFET Capacitance Characteristics.
HEMT Technologies.
Detailed MESFET/HEMT Control Device Characteristics.
SPICE Modeling.
SPICE Modeling.
Switch and Switched Circuit ApplicationsTransmit/Receive (TR) Switches.
Specific TR Switches.
Switched Passive Element for Tuning and Matching.
Control and Attenuator ApplicationsAttenuators.
Microwave and RF Limiters.
Phase Shifters References.