Mönch W. Electronic Properties of Semiconductor Interfaces

Springer Berlin Heidelberg, 2004. — 269 p. — ISBN: 978-3-642-05778-6.Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as the unifying concept, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.Metal-Semiconductor Contacts.
Semiconductor Heterostructures and the IFIGS Concept.Depletion Layer.
The Schottky Barrier.
Capacitance of Schottky Barriers.
Image-Force or Schottky Effect.Determination of Barrier Heights and Offsets.
Current Transport across Schottky Contacts.
Effective Barrier Height of Ideal Schottky Contacts.
Effective Richardson Constant.
I/V Characteristics of Real Schottky Contacts.
Barrier I leights of Real Schottky Contacts 1: I/V Characteristics,
Ballistic-Elcctron-Emission Microscopy.
Barrier Heights of Real Schottky Contacts 2: ВЕЕМ /соп/Пр Characteristics.
Barrier Heights of Real Schottky Contacts 3: Internal Photoemission Yield Spectroscopy.
Core-Level Photocmission Spectroscopy.
Barrier Heights of Real Schottky Diodes 4: XPS.
Metal-Induced Core-Level Shifts and the Intrinsic Interface Electric-Dipole Layer.
Determination of Band Offsets at Heterostructures.Laterally Inhomogeneous Schottky Contacts.
Potential Distribution.
Current Transport in Schottky Contacts with One Circular Patch.
Current Transport in Schottky Contacts with Many Circular Patches.
Test of the Patch Concept with Modified Contacts.
I/V and ВЕЕМ Test of the Patch Concept.
Origin of Lateral Barrier-Height Inhomogeneities.The IFIGS-and-Electronegativity Theory.
Band-Structure Lineup and Electronegativity: A Chemical Approach.
Barrier Heights and Interface Dipoles: A Phenomenological Approach.
Interface-Induced Gap States.
Virtual Gap States: One-Dimensional Model.
Virtual Gap States: Three-Dimensional Model.
Slope Parameter of Barrier Heights.The MIGS-and-Electronegativity Concept: Experiment and Theory.
Schottky Contacts.
Heterostructurcs.First-Principles Calculations of Barrier Heights and Valence-Band Offsets.
Introductory Remarks.
Schottky Barrier Heights.
Valence-Band Offsets at Heterostructures.Temperature and Pressure Effects.
Temperature Effects.
Pressure Effects.
Pseudomorphic Heterostructurcs.Barrier Heights and Extrinsic Interface Defects.
Defect-Induced Changes of Barrier Heights.
Application to p-GaP(110) Schottky Contacts.
Unified Defect Model.Extrinsic Interface Dipoles.
Interface Doping of Schottky Contacts.
Interface Structure.Ohmic Contacts.Appendix.

Subject Index.