Gao Jianjun. RF and Microwave Modeling and Measurement Techniques for Compound Field Effect Transistors

SciTech Publishing, 2010. — 339 p.Radio and microwave compound field-effect transistors (FETs), such as metal semiconductor field effect transistors (MESFETs), and heterojunction field effect transistors (HFETs), which include high electron mobility transistors (HEMTs) and pseudomorphic high electron mobility transistors (PHEMTs), extend the advantages of silicon counterparts to significantly higher frequencies. This advanced performance of FETs is attractive for high-frequency circuit design in view of a systemon-a-chip realization, where digital, mixed-signal baseband, and radio frequency (RF) transceiver blocks would be integrated on a single chip.
Accurate microwave and RF measurement techniques are the basis of characterization of the microwave and RF devices along with the corresponding model parameter extraction. Existing books on microwave and RF devices traditionally lack a thorough treatment of the high-frequency measurement techniques. The primary objective of the presente book is to bridge the gap between device modeling and state-of-the-art microwave measurement technique.
This book combines both measurement technique and its application in an example of compound semiconductor FETs. The book shows na approach on how to do the measurement and based on the measurement data, to start the small signal, nonlinear modeling, and parameter extraction for the devices. The book includes all detailed information for FETs, which seldom appears in other books like this, so this should be helpful for new researchers to make their way in their career. Even for those without a good microwave background, the contents of this book can be easily understood. The presentation of this book assumes only a basic course in electronic circuits as a prerequisite. Instead of using electromagnetic fields as most of the microwave engineering books do, the subject is introduced via circuit concepts.
This book is intended to serve as a reference book for practicing engineers and technicians working in the areas of RF, microwave and solidstate device, optoelectronic integrated circuit design. The book should also be useful as a text-book for RF and microwave courses designed for senior undergraduate and first-year graduate students. Especially in student design projects, we foresee that this book will be a valuable handbook as well as a reference, both on basic modeling issues and on specific FET models encountered in circuit simulators. For a senior course, chapters 4-7 are complementary to active microwave courses.Representation of Microwave Two-Port Network
Microwave and RF Measurement Techniques
FET Small Signal Modeling and Parameter Extraction
FET Nonlinear Modeling and Parameter Extraction
Microwave Noise Modeling and Parameter Extraction Technique for FETs.
Artificial Neural Network Modeling Technique for FET