Burghartz J.N. (ed.) Guide to State-of-the-Art Electron Devices

New York: Wiley-IEEE, 2013. — 324 p.Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications.
Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field.
Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society;
Contributed by internationally respected members of the electron devices community;
A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms;
Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered.
A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society.Foreword.

Introduction: Historic Timeline.Basic electron devices.
Bipolar Transistors.
Motivation.
The pn Junction and its Electronic Applications.
The Bipolar Junction Transistor and its Electronic Applications.
Optimization of Bipolar Transistors.
Silicon-Germanium Heterojunction Bipolar Transistors.MOSFETs.MOSFET Basics.
The Evolution of MOSFETs.
Closing Remarks.Memory Devices.Volatile Memories.
Non-Volatile Memories.
Future Perspectives of MOS Memories.
Closing Remarks.Passive Components.
Discrete and Integrated Passive Components.
Application in Analog ICs and DRAM.
The Planar Spiral Inductor–A Case Study.
Parasitics in Integrated Circuits.Emerging Devices.
Non-Charge-Based Switching.
Carbon as a Replacement for Silicon and the Rise of Grpahene Electronics and Moletronics.
Closing Remarks.Aspects of device and IC manufacturing.
Electronic Materials.Silicon Device Technology.
Compound Semiconductor Devices.
Electronic Displays.
Closing Remarks.Compact Modeling.
The Role of Compact Models.
Bipolar Transistor Compact Modeling.
MOS Transistor Compact Modeling.
Compact Modeling of Passive Components.
Benchmarking and Implementation.Technology Computer Aided Design.Drift-Diffusion Model.
Microscopic Transport Models.
Quantum Transport Models.
Process and Equipment Simulation.Reliability of Electron Devices, Interconnects and Circuits.
Introduction and Background.
Device Reliability Issues.
Circuit-Level Reliability Issues.
Microscopic Approaches to Assuring Reliability of ICs.Semiconductor Manufacturing.Substrates.
Lithography and Etching.
Front-End Processing.
Back-End Processing.
Process Control.
Assembly and Test.
Future Directions.Applications based on electron devices.
VLSI Technology and Circuits.MOSFET Scaling Trends.
Low-Power and High-Speed Logic Design.
Scaling Driven Technology Enhancements.
Ultra-Low Voltage Transistors.
Interconnects.
Memory Design.
System Integration.Mixed-Signal Technologies and Integrated Circuits.Analog/Mixed-Signal Technologies in Scaled CMOS.
Data Converter ICs.
Mixed-Signal Circuits for Low Power Displays.
Image Sensor Technologies and Circuits.Memory Technologies.
Semiconductor Memory History.
State of Mainstream Semiconductor Memory Today.
Emerging Memory Technologies.
Closing Remarks.RF and Microwave Semiconductor Technologies.
III-V-Based: GaAs and InP.
Si and SiGe.
Wide Bandgap Devices (Group-III Nitrides, SiC and Diamond).Power Devices and ICs.
Overview of Power Devices and ICs.
Two-Carrier and High-Power Devices.
Power MOSFET Devices.
High-Voltage and Power ICs.
Wide Bandgap Power Devices.Photovoltaic Devices.Silicon Photovoltaics.
Polycrystalline Thin-Film Photovoltaics.
III-V Compound Photovoltaics.
Future Concepts in Photovoltaics.Large Area Electronics.
Thin-Film Solar Cells.
Large Area Imaging.
Flat Panel Displays.Microelectromechanical Systems (MEMS).The 1960s – First Micromachined Structures Envisioned.
The 1970s – Integrated Sensors Started.
The 1980s – Surface Micromachining Emerged.
The 1990s – MEMS Impacted Various Fields.
The 2000s – Diversified Sophisticated Systems Enabled by MEMS.
Future Outlook.Vacuum Device Applications.Traveling-Wave Devices.
Klystrons.
Inductive Output Tubes.
Crossed-Field Devices.
Gyro-Devices.Optoelectronic Devices.Light Emission in Semiconductors.
Photodetectors.
Integrated Optoelectronics.
Optical Interconnects.
Closing Remarks.Devices for the Post CMOS Era.Devices for the 8-nm Node with Conventional Materials.
New Channel Materials and Devices.
Closing Remarks.