Triozon F., Dollfus P. (Eds.) Simulation of Transport in Nanodevices

ISTE Ltd and John Wiley & Sons, Inc., 2017. — 390 p. — (Nanoscience and Nanotechnology Series) — ISBN10: 1848215665Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.Introduction: Nanoelectronics, Quantum Mechanics, and Solid State Physics
Electronic Transport: Electrons, Phonons and Their Coupling within the Density Functional Theory
Electronic Band Structure: Empirical Pseudopotentials, k ⋅ ⋅ p and Tight-Binding Methods
Relevant Semiempirical Potentials for Phonon Properties
Introduction to Quantum Transport
Non-Equilibrium Green’s Function Formalism
Electron Devices Simulation with Bohmian Trajectories
The Monte Carlo Method for Wigner and Boltzmann Transport Equations