Powell R.A. (Eds.) Dry Etching for Microelectronics

Amsterdam: North-Holland Physics Publishing, 1984. — 306 p. — (Materials Processing: Theory and Practices, vol. 4). — ISBN: 978-0-444-86905-0.This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book is the inclusion of an extensive literature review of dry processing, compiled by search of computerized data bases. A subject index allows ready access to the key points raised in each of the chapters.Introduction to the Series.
Previous Volumes in the Series.
Preface to vol. 4.
Plasma-Assisted Etching of Aluminum and Aluminum Alloys.
Plasma Etching of Refractory Gates of Metals, Silicides and Nitrides.
Dry Etching of Group III-V Compound Semiconductors.
Reactive Ion Beam Etching.
Dry Etching for Microelectronics - A Bibliography.
Subject Index.