Shacham-Diamand Y., Osaka T., Datta M., Ohba T. (Eds.) Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications

Springer Science+Business Media, LLC, 2009. – 533 p. – ISBN: 978-0-387-95867-5.In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-largescale integration (ULSI) technology for integrated circuit (IC) application. Integrated circuit technology is the base for all modern electronics systems. You can find electronics systems today everywhere: from toys and home appliances to airplanes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the field of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e.g., speed, number of devices, chip area) improve exponentially as a function of time. For example, the number of components per chip doubles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits technology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.Challenges in ULSI Interconnects – Introduction to the Book
Technology Background
MOS Device and Interconnects Scaling Physics
Interconnects in ULSI Systems: Cu Interconnects Electrical Performance
Electrodeposition
Electrophoretic Deposition
Wafer-Level 3D Integration for ULSI Interconnects
Interconnect Materials
Diffusion Barriers for Ultra-Large-Scale Integrated Copper Metallization
Silicides
Materials for ULSI metallization – Overview of Electrical Properties
Low-κ Materials and Development Trends
Electrical and Mechanical Characteristics of Air-Bridge Cu Interconnects
ALD Seed Layers for Plating and Electroless Plating
Deposition Processes for ULSI Interconnects
Electrochemical Processes for ULSI Interconnects
Atomic Layer Deposition (ALD) Processes for ULSI Manufacturing
Electroless Deposition Approaching the Molecular Scale
Modeling
Modeling Superconformal Electrodeposition Using an Open Source PDE Solver
Electrochemical Process Integration
Introduction to Electrochemical Process Integration for Cu Interconnects
Damascene Concept and Process Steps
Advanced BEOL Technology Overview
Lithography for Cu Damascene Fabrication
Physical Vapor Deposition Barriers for Cu metallization – PVD Barriers
Low-k Dielectrics
CMP for Cu Processing
Electrochemical View of Copper Chemical–Mechanical Polishing (CMP)
Copper Post-CMP Cleaning
Electrochemical Processes and Tools
Electrochemical Processing Tools for Advanced Copper Interconnects: An Introduction
Electrochemical Deposition Processes and Tools
Electroless Deposition Processes and Tools
Tools for Monitoring and Control of Bath Components
Processes and Tools for Co Alloy Capping
Advanced Planarization Techniques
Metrology
Integrated Metrology (IM) History at a Glance
Thin Film Metrology – X-ray Methods
Summary and Foresight
Emerging Nanoscale Interconnect Processing Technologies: Fundamental and Practice
Self-Assembly of Short Aromatic Peptides: From Amyloid Fibril Formation to Nanotechnology