Krier A. (ed.) Mid-infrared Semiconductor Optoelectronics

Springer-Verlag London Limited 2006. — 379 pages out of 751. — (Springer Series in Optical Sciences).This book is an overview of the current status of science and technology associated with the development of semiconductor opto-electronic devices for the mid–infrared spectral range. The book is divided into four sections and although each of the chapters are individually self-contained we begin with a consideration of some fundamental physics which is more generally relevant to the narrow-gap III-V materials. In particular, the reader is given an overview of the main problems facing the design engineer in these materials and some of the possible solutions based on strained layer engineering (primarily in lasers) are considered and compared. The book is focused exclusively on semiconductor optoelectronic devices and so lasers light-emitting diodes, photodetectors and thermo-photovoltaic cells are discussed but optical parametric oscillators, fibre and crystal lasers are not considered here.
The section on lasers includes up-to-date contributions from experts working in a number of different areas including; strained Type I and Type II lasers, quantum cascade lasers, interface lasers and vertical cavity surface emitting lasers (VCSELs), principally in III-V compounds but also in those based on IV-VI compounds.
Methods and structures to achieve high-power operation using both electrical and optical pumping are included to give a comprehensive picture of the current state of the art in each of these technologies. Following the development of the quantum cascade laser it has recently emerged that there is a technology gap in the 3-4 μm region and at present there are no room temperature CW lasers which operate in this window. Consequently, there is much interest in the development of an efficient room temperature semiconductor laser for this region. A number of different approaches are being investigated and at the moment it is still an open question as to which one will be successful.
The section on light-emitting diodes (LEDs) and detectors reviews recent progress and considers the key developments in these devices and also includes a unique chapter on negative luminescence. In addition to the more conventional photodetector structures, quantum well (QWIP), quantum dot (QDIP) and strained layer superlattice detectors are considered and particularly with respect to their use in focal plane arrays. Meanwhile, avalanche photodiodes for the mid–infrared are also reviewed and considered in detail.
The final section is concerned with applications and highlights once again the diversity and technological importance of the mid–infrared spectral region.
Contributions include applications in the areas of optical gas sensing, thermophotovoltaic (TPV) cells for clean energy conversion, biomedical applications for diagnosis and treatment, as well as infrared countermeasures. It has not been possible to include everything of interest in this rapidly expanding field however we have endeavoured to provide the reader with an up to date overview of the current status in mid–infrared semiconductor optoelectronics which it is hoped will at least provide a starting point for further research and investigation as well as a useful
reference for the future.The last two sections are missing